Conditional Radiation Tolerance of Ferroelectric Hf0.5Zr0.5O2 Thin Film Under 60Co Gamma-ray Irradiation

Jin Namkung, Myeong Seop Song, Kyu Cheol Lee, Kyoungjun Lee, Jung Woo Cho, and Seung Chul Chae

Applied Physics Letters. 120, 162903 (2022)

Modulating the ferroelectricity of hafnium zirconium oxide ultrathin films via interface engineering to control the oxygen vacancy distribution

Lee, M. S. Song, W.-S. Jang, J. Byun, H. Lee, M. H. Park, J. Lee, Y.-M. Kim, S. C. Chae, T. Choi

Advanced Materials Interface, 210164 (2022).

Giant Tunneling Electroresistance in Epitaxial Ferroelectric Ultrathin Films Directly Integrated on Si  

Lee, J. Byun, K. Park, S. Kang, M. S. Song, J. Park, J. Lee, and S. C. Chae

Applied Materials Today 26, 101308 (2022).

Local field inhomogeneity and ferroelectric switching dynamics in Hf1-xZrxO2 thin films

S. Song, K. C. Lee, J. C. Choi, K. Lee and S. C. Chae

Physical Review Materials 5, 114408 (2021) .

인공지능 융합교육을 위한 데이터 기반 교육자료 개발: 감쇠진동을 중심으로

이준행, 조정효, 채승철

현장과학교육 15 121 (2021).

Enhanced Ferroelectric Switching Speed of Si-doped HfO2 Thin Film Tailored by Oxygen Deficiency

Lee, K. Park, H.-J. Lee, M. S. Song, K. C. Lee, J. Namkung, J. H. Lee, J. Park and S. C. Chae

Scientific Reports 11, 6290 (2021).

Electric field cycling-mediated variations in defect distributions associated with wake-up and split-up behaviors of a ferroelectric Si-doped HfO2 thin film

S. Song, T. Y. Lee, K. Lee, K. C. Lee, and S. C. Chae

Applied Physics Letters 117, 162903 (2020).

Scale-free ferroelectricity induced by flat phonon bands in HfO2

Hyun-Jae Lee, Minseong Lee, Kyoungjun Lee, Jinhyeong Jo, Hyemi Yang, Yungyeom Kim, Seung Chul Chae, Umesh Waghmare, Jun Hee Lee

Science 369 1343 (2020).

Complementary resistive switching and synaptic-like memory behavior in an epitaxial SrFeO2.5 thin film through oriented oxygen vacancy channels

R. Nallagatla, J. Kim, K. Lee, S. C. Chae, C. S. Hwang, and C. U. Jung

ACS Applied Materials and Interfaces 12, 41740 (2020).

Selective electrocatalysis imparted by metal–insulator transition for durability enhancement of automotive fuel cells

S.-M. Jung, S.-W. Yun, J.-H. Kim, S.-H. You, J. Park, S. Lee, S. H. Chang, S. C. Chae, S. H. Joo, Y. Jung, J. Lee, J. Son, J. Snyder, V. Stamenkovic, N. M. Markovic, Y.-T. Kim

Nature Catalysis 3 639 (2020).

Dynamic analysis of non-linear wake-up behavior in Hf0.7Zr0.3O2 thin film

J.C. Choi, M. S. Song, K. Lee, K. Park, J. Park, H. Lee, J. H. Lee, S. C. Chae

Current Applied Physics 20 746-750 (2020).

Ferroelectricity in SrTiO3 epitaxial thin films via Sr-vacancy-induced tetragonality

T. Kang, H. I. Seo, O. Kwon, K. Lee, J.-S. Bae, M.-W. Chu, S. C. Chae, Y. Kim, W. S. Choi

Applied Surface Science 499 143930 (2020).

Stable Sub-Loop Behavior in Ferroelectric Si-Doped HfO2

Lee, H. J. Lee, T. Y. Lee, H. H. Lim, M. S. Song, H. K. Yoo, D. I. Suh, J. G. Lee, Z. Zhu, A. Yoon, M. MacDonald, X. Lei, K. Park, J. Park, J. H. Lee, S. C. Chae

ACS Applied Materials & Interfaces 11 38929 (2019).

프로그래밍 기반 물리 학습을 위한 교수자료 개발의 사례연구: 예비교사가 개발한 교수자료의 평가 및 개발 경험에 대한 인식 분석을 중심으로

이준행, 지영래, 채승철

New Physics: Sae Mulli 69, 532 (2019).

Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network

T. Kang, C. J. Roh, J. Lim, T. Min, J. Lee, K. Lee, T. Y. Lee, S. Kang, D. Seol, J. Kim, H. Ohta, A. Khare, S. Park, Y. Kim, S. C. Chae, Y. S. Oh, J. Lee, J. Yu, J. S. Lee, W. S. Choi

Advanced Materials, 2019 1808140 (2019).

Ferroelectric Polarization Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

Y. Lee, K. Lee, H. H. Lim, M. S. Song, S. M. Yang, H. K. Yoo, D. I. Suh, Z. Zhu, A. Yoon, M. MacDonald, X. Lei, H.Y. Jeong, D. Lee, K. Park, J. Park, S. C. Chae

ACS Applied Materials & Interfaces 11, 3142 (2019).

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

Lee, T. Y. Lee, S. M. Yang, D. H. Lee, J. Park and S. C. Chae

Applied Physics Letters 111, 202901 (2018).

과학교육에서 Python을 이용한 기호연산, 시각화, 그리고 확률적 시뮬레이션의 활용방안

이준행, 지영래, 채승철

현장과학교육 12, 85 (2018).

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

M. Park, B. Wang, S. Das, S. C. Chae, J.-S. Chung, J.-G. Yoon, L.-Q. Chen, S. M. Yang and T. W. Noh

Nature Nanotechnology 18, 83 (2018).

Engineering of Ferroelectric Switching Speed in Si Doped HfO2 for High-Speed 1T-FERAM Application

K. Yoo, J. S. Kim, Z. Zhu, Y. S. Choi, A. Yoon, M. R. MacDonald, X. Lei, T. Y. Lee, D. Lee, S. C. Chae, J. Park, D. Hemker, J. G. Langan, Y. Nishi and S. J. Hong

IEDM17-418 (2017).

Large magnetoresistance in LaFeO3-substituted SrRuO3 epitaxial thin film

Das, S. K. Acharya, S. W. Cho, S. Lee, K. Lee, S. C. Chae, M. R. Cho and C. U. Jung

Journal of Alloys and Compounds 724, 549 (2017).

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory

K. Acharya, J. Jo, N. V. Raveendra, U. Dash, M. Kim, H. Baik, S. Lee, B. H. Park, J. S. Lee, S. C. Chae, C. S. Hwang and C. U. Jung

Nanoscale 9, 10502 (2017)

Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO

Wu, Y. Jia, Y. J. Shin, T. W. Noh, S. C. Chae and C. Liu

Applied Physics Letters 110, 143502 (2017)

Effect of substrate orientation on ferroelectric behavior of monoclinic BiFeO3 thin film

C. Jeon, S. M. Yang and S. C. Chae

Current Applied Physics 17, 684 (2017)

Epitaxial Brownmillerite oxide thin films for reliable switching memory

K. Acharya, R. V. Nallagatla, O. Togibasa, B. W. Lee, C. Liu, C. U. Jung, B. H. Park, J.-Y. Park, Y. Cho, D.-W. Kim, Janghyun Jo, D.-Hwang Kwon, M. Kim, C. S. Hwang and S. C. Chae

ACS Applied Materials & Interfaces 8, 7902 (2016)

Spin-orbit coupling induced band structure change and orbital character of epitaxial IrO2 films

J. Kim, S. Y. Kim, C. H. Kim, C. H. Sohn, O. B. Korneta, S. C. Chae and T. W. Noh

Physical Review B 93, 045104 (2016)

Domain patterns and electric properties at domain walls in a surface normal to the direction of ferroelectric polarization in h-ErMnO3

C. Chae

Journal of the Korean Physical Society, 66, 1381 (2015)

Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure

S.-H. Park and S. C. Chae

Journal of Physics D-Applied Physics, 48, 155102 (2015)